? D92M-02 pb free plating product D92M-02 20ampere,200volt insulated fast recovery diode for welding machine pb ultrafast recovery time soft recovery characteristics low recovery loss low forward voltage high surge current capability low leakage current application general description freewheeling, snubber, clamp inversion welder pfc plating power supply ultrasonic cleaner and welder converter & chopper ups product feature D92M-02 using the lastest fred fab process with ultrafast and soft recovery characteristic for welding machine. to-3pf/to-3pml internal configuration cathode anode base backside ? ? ? ? ? ? ? ? ? ? anode ? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 1/3 rev.05 unit absolute maximum ratings t c =25c unless otherwise specified symbol parameter/test conditions values v r maximum d.c. reverse voltage 210 v v m i r titi r v lt w c c n?m c /w g unit a ma ns ns a ns a v v rrm maximum repetitive reverse voltage i f(av) average forward current t c =110c, per diode 10 a t c =110c, per package 20 i f(rms) rms forward current t c =110c, per diode 14 i fsm non-repetitive surge forward current t j =45c,t=10ms, 50hz, sine 100 p d power dissipation 83 t j junction temperature -55 to +150 t stg storage temperature range -55 to +150 torque module-to-sink recommended m3 1.1 r th(j-c) junction-to-case thermal resistance, per diode 1.5 weight 5.2 electrical characteristics t c =25c unless otherwise specified symbol parameter/test conditions min. typ. max. 10 v r =220v, t j = 125c 10 v f forward voltage i f =10a 0.9 1.1 i rm maximum reverse leakage current v r =220v v i f =10a,t j =125c 0.95 trr reverse recovery time (i f = 1a, di f /dt = -200a/ s, v r = 30v) 17 trr reverse recovery time i f =10a,v r =100v, 32 i rrm maximum reverse recovery current di f /dt = -200a/ s 2.1 trr reverse recovery time i f = 10a,v r =100v, 45 i rrm maximum reverse recovery current di f /dt = -200a/ s ,t j =125c 5 0.8
? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 2/3 rev.05 figure 1. forward voltage drop vs forward current figure 2. reverse recovery time vs dif/dt 0 5 10 15 20 25 30 0.3 0.6 0.9 1.2 1.5 25c 125c 0 20 40 60 80 100 200 300 400 500 25c 125c 12 15 25c 125c di f /dt a/ s v f(v) i f(a) t rr (ns) 200 250 25c 125c ) per diode per diode figure 3. reverse recovery current vs dif/dt figure 4. reverse recovery charge vs dif/dt 0 3 6 9 100 200 300 400 500 0 4 8 12 25 50 75 100 125 150 175 dc t c( ) i f(a) i rrm(a) di f /dt a/ s 0 50 100 150 100 200 300 400 500 di f /dt a/ s q rrm(nc ) 0.01 0.1 1 10 0.001 0.01 0.1 1 10 z thjc (k/w) per diode per diode per diode per diode figure 5.forward current vs.case temperature figure 6. transient thermal impedance t c( ) rectangular pulse duration (seconds) ? D92M-02
di m ens ions in millimeters fig 8 . package outline ? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 3/3 rev.05 figure 7. diode reverse recovery test circuit and waveform ? D92M-02
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